PMZB290UNE2 Datasheet
PMZB290UNE2 Datasheet (NXP Semiconductors)
NXP Semiconductors
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and be.
and benefits
* Trench MOSFET technology
* Low threshold voltage
* Very fast switching
* ElectroStatic Discharge (ESD) protection > 2 kV HBM
* Ultra thin package profile of 0.37 mm
3. Applications
* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits
4. Quick reference .
PMZB290UNE2 Datasheet (Nexperia)
Nexperia
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and be.
and benefits
* Trench MOSFET technology
* Low threshold voltage
* Very fast switching
* ElectroStatic Discharge (ESD) protection > 2 kV HBM
* Ultra thin package profile of 0.37 mm
3. Applications
* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits
4. Quick reference .