PMZB670UPE Datasheet and Specifications PDF

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. SO T8 1.2 Featur.

and benefits
* Very fast switching
* Low threshold voltage
* Trench MOSFET technology
* ESD protection up to 2 kV
* Ultra thin package profile of 0.37 mm 1.3 Applications
* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits 1.4 Quick reference data Table 1. Symbol VD.

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and b.

and benefits
* Very fast switching
* Low threshold voltage
* Trench MOSFET technology
* ESD protection up to 2 kV
* Ultra thin package profile of 0.37 mm 1.3 Applications
* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits 1.4 Quick reference data Table 1. Quick .