| Part Number | PN2907 Datasheet |
|---|---|
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR PN2906, PN2907 series types are silicon PNP epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER TO-92 . mA, f=200MHz 200 VCB=10V, IE=0, f=1.0MHz 8.0 Cob Cib VEB=2.0V, IC=0, f=1.0MHz 30 ton VCC=30V, IC=150mA, IB1=15mA 45 toff VCC=6.0V, IC=150mA, IB1=IB2=15mA 100 PN2906A PN2907A MIN MAX 10 50 60 60 5.0 0.4 1.6 1.3 2.6 200 8.0 30 45 100 UNITS nA nA V V V V V V V MHz pF pF ns ns R2 . |
PN2907 Datasheet and Specifications PDF
The PN2907 is a PNP SILICON TRANSISTOR.
| Part Number | PN2907 Datasheet |
|---|---|
| Description | PNP General-Purpose Transistor |
| Manufacturer | onsemi |
| Overview | This device is designed for use with general−purpose amplifiers and switches requiring collector currents to 500 mA. These devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS compl. s. THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Max (Note 3) Unit PD Total Device Dissipation Derate Above 25°C 625 mW 5.0 mW/°C RqJC Thermal Resistance, Junction to Case 83.3 °C/W RqJA Thermal Resistance, Junction to Ambient 200 °C/W 3. PCB size: FR. |
| Part Number | PN2907 Datasheet |
|---|---|
| Description | PNP Amplifier |
| Manufacturer | Fairchild Semiconductor |
| Overview | This device is designed for use with general-purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from process 63. PN2907 EBC TO-92 MMBT2907 C SOT-23 Mark:2B E B Ord. um ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value -40 -60 -5.0 . |