PN4118 Datasheet and Specifications PDF

N-Channel JFET General Purpose Amplifier CORPORATION 2N4117 – 2N4119 / 2N4117A – 2N4119A PN4117 – PN4119 / PN4117A – PN4119A / SST4117 – SST4119 PIN CONFIGURATION FEATURES Leakage • Low • Low Capacit.

Leakage
* Low
* Low Capacitance TO - 92 TO-72 ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature Range . . . . . ..

PN4118 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix PN4118 The PN4118 is an Ultra-High Input Impedance N-Channel JFET The PN4118 provides ultra-high input impedance. The device is sp.

DIRECT REPLACEMENT FOR SILICONIX PN4118  LOW POWER  MINIMUM CIRCUIT LOADING  ABSOLUTE MAXIMUM RATINGS   @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  Operating Junction Temperature  Maximum Power Dissipation  Continuous Power Dissipation   MAXIMUM CURRENT Gate Current .

TO-18 OPTION STD TO-5 OPTION STD TO-92 STANDARD STRAIGHT LEADCLIP DIMENSION NO LEAD CLIP NO LEAD CLIP NO LEADCLIP QUANTITY 2.0 K / BOX 1.5 K / BOX 2.0 K / BOX BULK OPTION See Bulk Packing Information.

ty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient PN4117 350 2.8 125 357 Max *MMBF4117 225 1.8 556 Units mW mW/°.

n-channel JFETs designed for • • • • Ultra-High Input Impedance Amplifiers Electrometers pH Meters Smoke Detectors ABSOLUTE MAXIMUM RATINGS (25°C) Reverse Gate-Drain or Gate-Source Voltage -.

gos CISS Crss Gate Reverse Current PN4117 Series Only Gate Reverse Current PN4117A Senes Only Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Dram Current (Note 2) Common-Source Forward Transconductance (Note 2) Common-Source Output Conductance Common-Source Input Capal::1tance.