| Part Number | PSMN1R7-30YL Datasheet |
|---|---|
| Manufacturer | NXP Semiconductors |
| Overview |
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications ap.
and benefits
* High efficiency due to low switching and conduction losses * Suitable for logic level gate drive sources 1.3 Applications * Class-D amplifiers * DC-to-DC converters * Motor control * Server power supplies 1.4 Quick reference data Table 1. VDS ID Ptot Quick reference Conditions Tmb =. |
PSMN1R7-30YL Datasheet and Specifications PDF
The PSMN1R7-30YL is a N-channel FET.
| Part Number | PSMN1R7-30YL Datasheet |
|---|---|
| Description | N-channel MOSFET |
| Manufacturer | Nexperia |
| Overview |
Logic level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features an.
and benefits
* Advanced TrenchMOS provides low RDSon and low gate charge * High efficiency gains in switching power convertors * Improved mechanical and thermal characteristics * LFPAK provides maximum power density in a Power SO8 package 1.3 Applications * DC-to-DC converters * Lithium-ion batter. |