| Part Number | PZTA63 Datasheet |
|---|---|
| Manufacturer | Siemens Semiconductor Group |
| Overview | PNP Silicon Darlington Transistors PZTA 63 PZTA 64 For general AF applications q High collector current q High current gain q Complementary types: PZTA 13, PZTA 14 (NPN) q Type PZTA 63 PZTA 64 Mar. ics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 100 µA Collector-base breakdown voltage IC = 100 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCE = 30 V, IE = 0 VCE = 30 V, . |
PZTA63 Datasheet and Specifications PDF
The PZTA63 is a PNP Silicon Darlington Transistors.
| Part Number | PZTA63 Datasheet |
|---|---|
| Description | PNP Darlington Transistor |
| Manufacturer | Fairchild Semiconductor |
| Overview | MPSA63 / MMBTA63 / PZTA63 Discrete POWER & Signal Technologies MPSA63 MMBTA63 C PZTA63 C E C B E C B TO-92 E SOT-23 Mark: 2U B SOT-223 PNP Darlington Transistor This device is designed for . RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSA63 625 5.0 83.3 200 Max *MMBTA63 350 2.8 357 **PZTA63 1,000 8.0 125 Units mW mW/°C °C/W °C/W *Device mounted on F. |