| Part Number | PZTA64 Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview | MPSA64 / MMBTA64 / PZTA64 Discrete POWER & Signal Technologies MPSA64 MMBTA64 C PZTA64 C E C B E C B TO-92 E SOT-23 Mark: 2V B SOT-223 PNP Darlington Transistor This device is designed for . rwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSA64 625 5.0 83.3 200 Max *MMBTA64 350 2.8 357 **PZTA64 1,000 8.0 125 Units mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **D. |
PZTA64 Datasheet and Specifications PDF
The PZTA64 is a PNP Darlington Transistor.
Key Specifications
| Package | SOT-223-4 |
|---|---|
| Mount Type | Surface Mount |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | PZTA64 Datasheet |
|---|---|
| Description | PNP Darlington transistor |
| Manufacturer | NXP Semiconductors |
| Overview |
PNP Darlington transistor in a SOT223 plastic package. NPN complement: PZTA14.
handbook, halfpage
PZTA64
PINNING PIN 1 2, 4 3 base collector emitter DESCRIPTION
4
1
2, 4
TR1 TR2 3
1 Top view
2
.
* High current (max. 500 mA) * Low voltage (max. 30 V). APPLICATIONS * Preamplifiers requiring high input impedance. DESCRIPTION PNP Darlington transistor in a SOT223 plastic package. NPN complement: PZTA14. handbook, halfpage PZTA64 PINNING PIN 1 2, 4 3 base collector emitter DESCRIPTION 4 1 2,. |
| Part Number | PZTA64 Datasheet |
|---|---|
| Description | PNP Silicon Darlington Transistors |
| Manufacturer | Siemens Semiconductor Group |
| Overview | PNP Silicon Darlington Transistors PZTA 63 PZTA 64 For general AF applications q High collector current q High current gain q Complementary types: PZTA 13, PZTA 14 (NPN) q Type PZTA 63 PZTA 64 Mar. ics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 100 µA Collector-base breakdown voltage IC = 100 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCE = 30 V, IE = 0 VCE = 30 V, . |
| Part Number | PZTA64 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | JCET |
| Overview |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-223 Plastic-Encapsulate Transistors
PZTA64 TRANSISTOR (PNP)
FEATURES Low Voltage and High Current High Current Gain Applications
SOT-223
1..
* Low Voltage and High Current * High Current Gain Applications SOT-223 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage -30 VCEO Collector-Emitter Voltage -30 VEBO Emitter-Base Voltage -10 IC Collector. |