QM2601S Datasheet and Specifications PDF

The QM2601S is a N-Ch and P-Ch Fast Switching MOSFETs.

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Part NumberQM2601S Datasheet
ManufacturerUBIQ Semiconductor
Overview The QM2601S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch. z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Product Summery BVDSS 20V -20V RDSON 18mΩ 50mΩ ID 7.2A -4.5A Applications z High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA z Netwo.
Part NumberQM2601S Datasheet
DescriptionN- and P-Channel MOSFET
ManufacturerVBsemi
Overview QM2601S-VB QM2601S-VB Datasheet N- and P-Channel 20-V (D-S) MOSFETS PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.006 at VGS = 4.5 V N-Channel 20 0.010 at VGS = 2.5 V P-Channel 0.016 at.
* Halogen-free
* TrenchFET® Power MOSFETs APPLICATIONS
* Load Switch
* DC/DC Converter D1 S2 RoHS COMPLIANT G2 G1 S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage Gate-Sour.