| Part Number | QM6008G Datasheet |
|---|---|
| Manufacturer | UBIQ Semiconductor |
| Overview | The QM6008G is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applicat. z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z Green Device Available Product Summery BVDSS 60V RDSON 100mΩ ID 2.8A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power Syst. |
QM6008G Datasheet and Specifications PDF
The QM6008G is a N-Ch 60V Fast Switching MOSFETs.
| Part Number | QM6008G Datasheet |
|---|---|
| Description | N-Channel 60V MOSFET |
| Manufacturer | VBsemi |
| Overview |
QM6008G-VB
QM6008G-VB Datasheet
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.075 at VGS = 10 V 60
0.086 at VGS = 4.5 V
ID (A)a 4.0 3.8
Qg (Typ.) 2.1 nC
TO-.
* Halogen-free According to IEC 61249-2-21 Available * Trench Power MOSFET * 100 % Rg Tested * 100 % UIS Tested APPLICATIONS * Battery Switch * DC/DC Converter D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Vol. |