| Part Number | R6006JND3 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source.
*Drain Current *ID=6A@ TC=25℃ *Drain Source Voltage- : VDSS=600V(Min) *Static Drain-Source On-Resistance : RDS(on) = 936mΩ(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Designed for use in switch mode power supplies and . |
R6006JND3 Datasheet and Specifications PDF
The R6006JND3 is a N-Channel MOSFET.
| Part Number | R6006JND3 Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | ROHM |
| Overview | R6006JND3 Nch 600V 6A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.936Ω ±6A 86W lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be. 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lOutline TO-252 lInner circuit Datasheet lApplication Switching lPackaging specifications Packing Embossed Tape Packing code. |