R6006KND3 Datasheet

The R6006KND3 is a N-Channel MOSFET.

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Part NumberR6006KND3
ManufacturerInchange Semiconductor
Overview ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source.
*Drain Current
*ID=6A@ TC=25℃
*Drain Source Voltage- : VDSS=600V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 830mΩ(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*Designed for use in switch mode power supplies and .
Part NumberR6006KND3
DescriptionPower MOSFET
ManufacturerROHM
Overview R6006KND3 　　Nch 600V 6A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 830mΩ ±6A 70W lFeatures 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compl. 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lOutline TO-252 　 　 　 　 　　　　　　 lInner circuit 　　 Datasheet 　 lApplication Switching lPackaging specifications Packing Embossed Tape Packing code TL1 Marking R6006K Basic ordering.