RN4604 Datasheet
RN4604 Datasheet (Toshiba)
Toshiba
RN4604 TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN4604 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Unit: mm I.
ic Devices & Storage Corporation
Start of commercial production
1988-11
2019-11-01
RN4604
Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector power dissipation Junction temperature Storage temperature range
PC * Tj Tstg
300
mW
150
°C
*55 to 15.