| Part Number | S26KS512S Datasheet |
|---|---|
| Manufacturer | Cypress |
| Overview |
4 1.1 DDR Center Aligned Read Strobe
Functionality (DCARS) 6 1.2 Error Detection and Correction Fu.
* 3.0V I/O, 11 bus signals * Single ended clock * 1.8V I/O, 12 bus signals * Differential clock (CK, CK#) * Chip Select (CS#) * 8-bit data bus (DQ[7:0]) * Read-Write Data Strobe (RWDS) * HyperFlash™ memories use RWDS only as a Read Data Strobe * Up to 333 MBps sustained read throughput * DDR * two d. |
S26KS512S Datasheet and Specifications PDF
The S26KS512S is a high-speed CMOS MirrorBit NOR flash devices.
Key Specifications
| Operating Voltage | 1.8 V |
|---|---|
| Max Voltage (typical range) | 2 V |
| Min Voltage (typical range) | 1.7 V |
| Max Frequency | 166 MHz |
| Length | 8 mm |
| Width | 6 mm |
| Max Operating Temp | 85 °C |
| Min Operating Temp | -40 °C |
| Part Number | S26KS512S Datasheet |
|---|---|
| Description | 512Mb (64MB) HYPER FLASH |
| Manufacturer | Infineon |
| Overview |
5 1.1 DDR center aligned read strobe (DCARS) functionality .
* 3.0 V I/O, 11 bus signals - Single ended clock * 1.8 V I/O, 12 bus signals - Differential clock (CK, CK#) * Chip Select (CS#) * 8-bit data bus (DQ[7:0]) * Read-write data strobe (RWDS) - HYPERFLASH™ memories use RWDS only as a Read Data Strobe * Up to 333-MBps sustained read throughput * DDR: two . |