SBL1635CT Datasheet

The SBL1635CT is a 16A SCHOTTKY BARRIER RECTIFIER.

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Part NumberSBL1635CT
ManufacturerDiodes Incorporated
Overview NOT RECOMMENDED FOR NEW DESIGN SBL1630CT - SBL1660CT 16A SCHOTTKY BARRIER RECTIFIER Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Eff.
* Schottky Barrier Chip
* Guard Ring Die Construction for Transient Protection
* Low Power Loss, High Efficiency
* High Surge Capability
* High Current Capability and Low Forward Voltage Drop
* For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications
* Le.
Part NumberSBL1635CT
Description16A Schottky Barrier Rectifier
ManufacturerSEP ELECTRONIC
Overview SEP ELECTRONIC CORP. SBL1630CT thru SBL1660CT 16 A Schottky Barrier Rectifier Rectifier Reverse Voltage 30 to 60V Features Extremely low VF Epitaxial construction Low power loss, high efficiency Low. Extremely low VF Epitaxial construction Low power loss, high efficiency Low stored charge, majority carrier construction Plastic material has UL flammability classification 94V-0 Mechanical Data Case: Molded plastic Terminals: Solder plated solderable per MIL-STD-202, Method 208 Polarity: As marked .
Part NumberSBL1635CT
DescriptionSCHOTTKY BARRIER RECTIFIERS
ManufacturerLITEON
Overview LITE-ON SEMICONDUCTOR SBL1630CT thru 1660CT SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 16 Amperes FEATURES Metal of silicon rectifier,majority carrier conducton. Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency High current capability, low VF High surge capacity Plastic package has UL flammability classification 94V-0 For use in low voltage,high frequency inverters,free whelling,and pol.
Part NumberSBL1635CT
DescriptionSchottky Barrier Rectifier
ManufacturerGalaxy Microelectronics
Overview Production specification Schottky Barrier Rectifier SBL1630CT-SBL1660CT FEATURES z Metal-Semicondutcor Junction With Guard Ring. Pb z Epitaxial Construction. Lead-free z Low Forward Voltage Dro. z Metal-Semicondutcor Junction With Guard Ring. Pb z Epitaxial Construction. Lead-free z Low Forward Voltage Drop,Low Switching Losses. z High Surge Capacity. z For Use In Low Voltage,High Frequency Inverters Free Wheeling,and Polarity Protection Applications. z The Plastic Material Carries U.