SD51 Datasheet and Specifications PDF

The SD51 is a SCHOTTKY RECTIFIER.

Key Specifications Powered by Octopart

Mount TypeStud
Max Operating Temp175 °C
Min Operating Temp-65 °C

SD51 Datasheet

SD51 Datasheet (International Rectifier)

International Rectifier

SD51 Datasheet Preview

Features TO-203AB (DO-5) The SD51 Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up.

TO-203AB (DO-5) The SD51 Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheeli.

SD51 Datasheet (Naina Semiconductor)

Naina Semiconductor

SD51 Datasheet Preview

Naina Semiconductor emiconductor Ltd. Schottky Barrier Rectifier Diode Features • Fast Switching • Low forward voltage drop, VF • Guard ring protection • High surge capacity • Hig.


* Fast Switching
* Low forward voltage drop, VF
* Guard ring protection
* High surge capacity
* High efficiency, low power loss SD51 Electrical Ratings (TC = 250C, unless otherwise noted) Parameter Repetitive peak reverse voltage DC blocking voltage Non-repetitive peak reverse voltage Average rect.

SD51 Datasheet (GeneSiC)

GeneSiC

SD51 Datasheet Preview

Silicon Power Schottky Diode Features • High Surge Capability • Types up to 45 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud i.


* High Surge Capability
* Types up to 45 V VRRM
* Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. SD51 thru SD51R VRRM = 45 V IF = 60 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have .

SD51 Datasheet (Naina)

Naina

SD51 Datasheet Preview

SD51 SCHOTTKY RECTIFIER 60 AMPERE 45 VOLTS Switch mode Power Rectifier. employing the Schottky Barrier principle in a large area metal-to-silicon power diode.State-of-the-art geometry features epitaxi.

epitaxial construction with oside passivation and metal overlap contact. ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free whelling diodes, and polarity protection diodes.
* Extremely Low VF
* Low Power Loss/High
* Low Stored Charge, Majority Efficiency Carrier Cond.

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