SK22B Datasheet and Specifications PDF

The SK22B is a SCHOTTKY BARRIER RECTIFIER.

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Part NumberSK22B Datasheet
ManufacturerKINGWELL
Overview KINGWELL TECHNOLOGY CORP., LTD. SK22B-SK220B Kingwell Corp.P1-P2 KINGWELL TECHNOLOGY CORP., LTD. SK22B-SK220B Kingwell Corp.P2-P2 . .
Part NumberSK22B Datasheet
Description2A Surface Mount Schottky Barrier Rectifiers
ManufacturerChip Integration Technology
Overview SK22B THRU SK220B 2A Surface Mount Schottky Barrier Rectifiers ■ Features • Electrostatic discharge (ESD) test under IEC6100-4-2 standard >16ΚV(SK22B~SK26B). standard >10ΚV(SK210B~SK220B). • Low prof.
* Electrostatic discharge (ESD) test under IEC6100-4-2 standard >16ΚV(SK22B~SK26B). standard >10ΚV(SK210B~SK220B).
* Low profile surface mounted application in order to optimize board space.
* Low power loss, high efficiency.
* High current capability, low forward voltage drop.
* Ultra high-speed sw.
Part NumberSK22B Datasheet
DescriptionSURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
ManufacturerPaceleader
Overview SK22B thru SK210B SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE - 20 TO 100 VOLTS CURRENT - 2.0 AMPERES .075(1.91) .083(2.11) SMB/DO-214AA .130(3.30) .155(3.94) .083(2.13) .096(2.44) .030(0.76). Plastic package has Underwriters Laboratory Flammability Classification 94V-0 For surface mount applications Low profile package Built-in strain relief Metal to silicon rectifier, majority carrier conduction Low power loss, high efficiency High surge capability For use in low voltage high frequency .
Part NumberSK22B Datasheet
DescriptionSURFACE MOUNT SCHOTTKY BARRIER DIODES
ManufacturerSunmate
Overview SK22B - SK210B SURFACE MOUNT SCHOTTKY BARRIER DIODES VOLTAGE RANGE: 20 - 100V CURRENT: 2.0 A Features ! Schottky Barrier Chip ! Ideally Suited for Automatic Assembly ! Low Power Loss, High Efficienc. ! Schottky Barrier Chip ! Ideally Suited for Automatic Assembly ! Low Power Loss, High Efficiency ! For Use in Low Voltage Application ! Guard Ring Die Construction ! Plastic Case Material has UL Flammability B          Classifica tio n R ating 9 4V-O     .