SMG5403 Datasheet
SMG5403 Datasheet (SeCoS Halbleitertechnologie GmbH)
SeCoS Halbleitertechnologie GmbH
The SMG5403 uses advanced trench technology to provide excellent on-resistance with low gate change. The device is suitable for use as a load switch or in PWM applications. 1 SC-59 A L 3 3 Top View .
Lower Gate Threshold Voltage Small Package Outline K E D F REF. G Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 H REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 J MARKING 5403 PACKAGE INFORMATION Package SC-59 MPQ 3K Le.
SMG5403 Datasheet (VBsemi)
VBsemi
SMG5403-VB SMG5403-VB Datasheet P-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Typ. 0.046 at VGS = - 10 V - 30 0.049 at VGS = - 6 V 0.054 at VGS = - 4.5 V ID (A)a - 5.6 -5 -4.
* Trench Power MOSFET
* 100 % Rg Tested
APPLICATIONS
* For Mobile Computing
- Load Switch - Notebook Adaptor Switch - DC/DC Converter
G1 S2
3D
Top View
G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Volt.