SMV1406 Datasheet and Specifications PDF

SILICON HYPERABRUPT TUNING DIODES • High capacitance ratios • Linear tuning between 2 and 8 volts • Available over a broad range junction capacitances • Satisfies a large number of broadband applicati.

07, -08, -09, -10, -15 Device Dissipation (PD) Ta = 25°C Junction Temperature (TJ) Reverse Breakdown Voltage (VBR) 10 µAdc Max Reverse Leakage Current (IR) Vr = 10 Vdc Operating Temperature (Topr) Storage Temperature (Tstg) Capacitance Tolerance
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* 250 mW 125°C 12 Vdc Min 0.1 µAdc -55° to + 125°C.

The SMV14xx Series tuning varactors are silicon abrupt junction devices. They are designed for RF and Microwave applications in VCO’s, tunable filters, and matching networks. Available in a wide range.

* High Capacitance Ratios
* Linear Tuning Between 2 and 8 Volts
* Available over a Broad Range of Junction Capacitance
* Satisfies a Large Number of Broadband Applications thru the VHF Frequency Band
* RoHS* Compliant Description The SMV14xx Series tuning varactors are silicon abrupt junction device.