| Part Number | SP8611 Datasheet |
|---|---|
| Manufacturer | SamHop Microelectronics |
| Overview | Green Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor SP8611 Ver 2.1 PRODUCT SUMMARY VDSS 20V ID RDS(ON) (mΩ) Max 12.5 @ VGS=4.5V 13.5 @ VGS=4.0V 8A. Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D1 D1 D2 D2 S mini 8 PIN 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuou. |
SP8611 Datasheet and Specifications PDF
The SP8611 is a Dual N-Channel Enhancement Mode Field Effect Transistor.
| Part Number | SP8611 Datasheet |
|---|---|
| Description | asynchronous ECL divide |
| Manufacturer | Zarlink Semiconductor |
| Overview |
Obsolescence Notice
This product is obsolete. This information is available for your convenience only. For more information on Zarlink’s obsolete products and replacement product lists, please visit
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s ECL Compatible Outputs
s AC-Coupled Inputs (Internal Bias)
QUICK REFERENCE DATA s Supply Voltage: 25 *2V SP8610 SP8611 11 10 INTERNAL BIAS DECOUPLING VEE 9 8 s Power Consumption: 380mW s Max. Input Frequency: 1500MHz (SP8611B) s Temperature Range: A Grade: 255°C to 1110°C (1125°C with suitabl. |