SPA06N60C3 Datasheet
SPA06N60C3 Datasheet (Infineon)
Infineon
CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances • E.
* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* High peak current capability
* Ultra low effective capacitances
* Extreme dv /dt rated
* Improved transconductance
* Fully isolated package (2500 V AC; 1 minute)
Product Summary
V DS @ T j,max
R DS(on.
SPA06N60C3 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minim.
*With TO-220F package
*Low input capacitance and gate charge
*Low gate input resistance
*Reduced switching and conduction losses
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*APPLICATIONS
*Switching applications
INCHANGE Semiconductor
SP.