SPA07N60C3 Datasheet
SPA07N60C3 Datasheet (Infineon)
Infineon
SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.6 Ω ID 7.3 A • Periodic aval.
* New revolutionary high voltage technology
* Ultra low gate charge
VDS @ Tjmax 650 V
RDS(on)
0.6 Ω
ID
7.3 A
* Periodic avalanche rated
PG-TO220FP PG-TO262
PG-TO220
* Extreme dv/dt rated
2
* High peak current capability
* Improved transconductance
1 23 P-TO220-3-31
P-TO220-3-1
23 1
* .
SPA07N60C3 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPA07N60C3 ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction .
*With TO-220F package
*Low input capacitance and gate charge
*Low gate input resistance
*Reduced switching and conduction losses
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*APPLICATIONS
*Switching applications
*ABSOLUTE MAXIMUM RATINGS.