SPA08N50C3 Datasheet and Specifications PDF

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 7.6A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) ·100%.

*Drain Current ID= 7.6A@ TC=25℃
*Drain Source Voltage- : VDSS=500V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATIONS
*Switching applications
*ABSOLUTE MAXIMUM RATING.

SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax 560 V RDS(on) 0.6 Ω ID 7.6 A • Periodic aval.

* New revolutionary high voltage technology
* Ultra low gate charge VDS @ Tjmax 560 V RDS(on) 0.6 Ω ID 7.6 A
* Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220
* Extreme dv/dt rated
* Ultra low effective capacitances
* Improved transconductance 23 1 P-TO220-3-31
* PG-TO-220-3-31;-3-.