SPA11N65C3 Datasheet
SPA11N65C3 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F Package ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.38Ω(Max) ·100% avalanch.
*With TO-220F Package
*Drain Source Voltage-
: VDSS=650V(Min)
*Static Drain-Source On-Resistance
: RDS(on) = 0.38Ω(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*APPLICATIONS
*Switching applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃).
SPA11N65C3 Datasheet (Infineon)
Infineon
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transc.
* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* High peak current capability
* Improved transconductance
SPP11N65C3,SPA11N65C3 SPI11N65C3
PG-TO262
V DS RDS(on)
ID
650 V 0.38 Ω 11 A
PG-TO220FP PG-TO220
Type SPP11N65C3 SPA11N.