SPA11N80C3 Datasheet
SPA11N80C3 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
isc N-Channel MOSFET Transistor ·FEATURES ·New revolutionary high voltage technology ·Ultra low gate charge ·High peak current capability ·Improved transconductance ·100% avalanche tested ·Minimum Lot.
*New revolutionary high voltage technology
*Ultra low gate charge
*High peak current capability
*Improved transconductance
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
INCHANGE Semiconductor
SPA11N80C3
*APPLICATIONS
*Switching applicati.
SPA11N80C3 Datasheet (Infineon)
Infineon
CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free .
* New revolutionary high voltage technology
* Extreme dv/dt rated
* High peak current capability
* Qualified according to JEDEC1) for target applications
* Pb-free lead plating; RoHS compliant
* Ultra low gate charge
* Ultra low effective capacitances
* Fully isolated package (2500 VAC; 1 minute) Co.