SPA15N60C3 Datasheet
SPA15N60C3 Datasheet (Infineon)
Infineon
SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID • Periodic avalanche rated PG-TO220F.
* New revolutionary high voltage technology
* Ultra low gate charge
VDS @ Tjmax RDS(on) ID
* Periodic avalanche rated
PG-TO220FP PG-TO262
* Extreme dv/dt rated
* Ultra low effective capacitances
* Improved transconductance
P-TO220-3-31
3 12
* PG-TO-220-3-31;-3-111: Fully isolated package (25.
SPA15N60C3 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
isc N-Channel MOSFET Transistor SPA15N60C3 ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.28Ω@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device p.
* Drain-source on-resistance:
RDS(on) ≤ 0.28Ω@10V
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*DESCRITION
*High fast switching Power Supply
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-.