SPA21N50C3 Datasheet
SPA21N50C3 Datasheet (Infineon)
Infineon
SPP21N50C3 SPI21N50C3, SPA21N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated •.
* New revolutionary high voltage technology
* Worldwide best RDS(on) in TO 220
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* Ultra low effective capacitances
* Improved transconductance
1 2 3
VDS @ Tjmax RDS(on) ID
PG-TO220FP P G-TO262
560 0.19 21
PG-TO220
V Ω A
Type.
SPA21N50C3 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.19Ω(Max) ·100% avalanche tested ·Minimum Lot-.
*Drain Source Voltage-
: VDSS=500V(Min)
*Static Drain-Source On-Resistance
: RDS(on) = 0.19Ω(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*APPLICATIONS
*Switching applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
V.