SPB04N60C3 Datasheet and Specifications PDF

Final data SPP04N60C3, SPB04N60C3 SPA04N60C3 VDS @ Tjmax RDS(on) ID 650 0.95 4.5 V Ω A Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Period.

* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* High peak current capability
* Improved transconductance P-TO220-3-31 1 2 3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1
* P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Ty.

Isc N-Channel MOSFET Transistor SPB04N60C3 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variatio.

*With To-263(D2PAK) package
*Low input capacitance and gate charge
*Low gate input resistance
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATIONS
*Switching applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE .