SPB17N80C3 Datasheet
SPB17N80C3 Datasheet (Infineon)
Infineon
CoolMOS® Power Transistor Features • new revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free l.
* new revolutionary high voltage technology
* Extreme dv/dt rated
* High peak current capability
* Qualified according to JEDEC1) for target applications
* Pb-free lead plating; RoHS compliant
* Ultra low gate charge
* Ultra low effective capacitances
Product Summary V DS R DS(on)max @ Tj = 25°C Q .
SPB17N80C3 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
Isc N-Channel MOSFET Transistor SPB17N80C3 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variatio.
*With To-263(D2PAK) package
*Low input capacitance and gate charge
*Low gate input resistance
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*APPLICATIONS
*Switching applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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