SPD02N60C3 Datasheet
SPD02N60C3 Datasheet (Infineon)
Infineon
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SPD02N60C3 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
isc N-Channel MOSFET Transistor SPD02N60C3,ISPD02N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤3Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust de.
*Static drain-source on-resistance:
RDS(on)≤3Ω
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*DESCRITION
*Ultra low effective capacitance
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source V.