SPD02N60S5 Datasheet
SPD02N60S5 Datasheet (Infineon)
Infineon
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved tr.
* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* Ultra low effective capacitances
* Improved transconductance
SPU02N60S5 SPD02N60S5
VDS RDS(on)
ID
PG-TO252
600 V
3
Ω
1.8 A
PG-TO251
2
3 1
3 2 1
Type SPU02N60S5 SPD02N60S5
.
SPD02N60S5 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
isc N-Channel MOSFET Transistor SPD02N60S5,ISPD02N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤3Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust de.
*Static drain-source on-resistance:
RDS(on)≤3Ω
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*DESCRITION
*Ultra low effective capacitance
*Improved transconductance
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
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