SPD02N80C3 Datasheet
SPD02N80C3 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
isc N-Channel MOSFET Transistor SPD02N80C3,ISPD02N80C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤2.7Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust .
*Static drain-source on-resistance:
RDS(on)≤2.7Ω
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*DESCRITION
*High peak current capability
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source V.
SPD02N80C3 Datasheet (Infineon)
Infineon
SPD02N80C3 CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target application.
* New revolutionary high voltage technology
* Extreme dv/dt rated
* High peak current capability
* Qualified according to JEDEC1) for target applications
Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ
800 V 2.7 W 12 nC
* Pb-free lead plating; RoHS compliant; available in Halogen free mold c.