The SPD03N60S5 is a N-Channel MOSFET.
| Package | TO-252-3 |
|---|---|
| Mount Type | Surface Mount |
| Height | 2.49 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | SPD03N60S5 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
SPD03N60S5,ISPD03N60S5
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤1.4Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust .
*Static drain-source on-resistance: RDS(on)≤1.4Ω *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Improved transconductance *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Volta. |
| Part Number | SPD03N60S5 Datasheet |
|---|---|
| Description | Cool MOS Power Transistor |
| Manufacturer | Infineon |
| Overview |
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved tr.
* New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances * Improved transconductance SPU03N60S5 SPD03N60S5 VDS RDS(on) ID PG-TO252 600 V 1.4 Ω 3.2 A PG-TO251 2 3 1 3 2 1 Type SPU03N60S5 SPD03N60S5 P. |
| Seller | Inventory | Price Breaks | Buy |
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| Rochester Electronics | 12444 | 100+ : 0.6266 USD 500+ : 0.5639 USD 1000+ : 0.5201 USD 10000+ : 0.4637 USD |
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