SPD04N80C3 Datasheet and Specifications PDF

SPD04N80C3 CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ .

* New revolutionary high voltage technology
* Extreme dv/dt rated
* High peak current capability Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ
* Fully qualified according to JEDEC for Industrial Applications 800 V 1.3 ! 23 nC
* Pb-free lead plating; RoHS compliant; Halogen free mold compo.

isc N-Channel MOSFET Transistor SPD04N80C3,ISPD04N80C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.3Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust .

*Static drain-source on-resistance: RDS(on)≤1.3Ω
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*High peak current capability
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source V.