SPD06N80C3 Datasheet
SPD06N80C3 Datasheet (Infineon)
Infineon
SPD06N80C3 CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC for target applications .
* New revolutionary high voltage technology
* Extreme dv/dt rated
* High peak current capability
* Qualified according to JEDEC for target applications
Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ
800 V 0.9 W 31 nC
* Pb-free lead plating; RoHS compliant; Halogen free mold compound
* Ultr.
SPD06N80C3 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
isc N-Channel MOSFET Transistor SPD06N80C3,ISPD06N80C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.9Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust .
*Static drain-source on-resistance:
RDS(on)≤0.9Ω
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*DESCRITION
*High peak current capability
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source V.