SPD07N60C3 Datasheet and Specifications PDF

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*& a) Except PG-TO251, non-Halogen free (OPN: SPD07N60C3BT), Halogen free (OPN: SPD07N60C3AT) Rev. 2.8 PDJH 200.

isc N-Channel MOSFET Transistor SPD07N60C3,ISPD07N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust .

*Static drain-source on-resistance: RDS(on)≤0.6Ω
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*High peak current capability
*Improved transconductance
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER .