SPD08N50C3 Datasheet
SPD08N50C3 Datasheet (Infineon)
Infineon
SPD08N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-252 • Ultra low gate charge VDS @ Tjmax 560 V RDS(on) 0.6 Ω ID 7.6 A PG-.
* New revolutionary high voltage technology
* Worldwide best RDS(on) in TO-252
* Ultra low gate charge
VDS @ Tjmax 560 V
RDS(on)
0.6 Ω
ID
7.6 A
PG-TO252
* Periodic avalanche rated
* Extreme dv/dt rated
* Ultra low effective capacitances
* Improved transconductance
, available in Halogen f.
SPD08N50C3 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
isc N-Channel MOSFET Transistor SPD08N50C3, ISPD08N50C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤600mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust.
*Static drain-source on-resistance:
RDS(on)≤600mΩ
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*DESCRITION
*Improved transconductance
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Vol.