SPI07N65C3 Datasheet and Specifications PDF

·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Con.

*Static drain-source on-resistance: RDS(on) ≤0.6Ω
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRIPTION
*Ultra low gate charge
*High peak current capability
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) .

SPP07N65C3, SPI07N65C3 SPA07N65C3 CoolMOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge V DS RDS(on) ID 650 V 0.6 Ω 7.3 A • Periodic avalanche rated.

* New revolutionary high voltage technology
* Ultra low gate charge V DS RDS(on) ID 650 V 0.6 Ω 7.3 A
* Periodic avalanche rated PG-TO220-3 PG-TO262-3-1 PG-TO220
* Extreme dv/dt rated 2
* High peak current capability
* Improved transconductance P-TO220-3-31 23 1
* PG-TO-220-3 : Fully isola.