SPI12N50C3 Datasheet
SPI12N50C3 Datasheet (Infineon)
Infineon
SPP12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax 560 V RDS(on) 0.38 Ω ID 11.6 A • Periodic av.
* New revolutionary high voltage technology
* Ultra low gate charge
VDS @ Tjmax 560 V
RDS(on)
0.38 Ω
ID
11.6 A
* Periodic avalanche rated
PG-TO220-F3P-31 PG-TO262- PG-TO220
* Extreme dv/dt rated
2
* Ultra low effective capacitances
* Improved transconductance
1 23 P-TO220-3-31
P-TO220-3-.
SPI12N50C3 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.38Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d.
*Static drain-source on-resistance:
RDS(on) ≤0.38Ω
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*DESCRITION
*New revolutionary high voltage technology
*Ultra low effective capacitance
*ABSOLUTE MAX.