SPI16N50C3 Datasheet
SPI16N50C3 Datasheet (Infineon)
Infineon
SPP16N50C3 SPI16N50C3, SPA16N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID 560 0.28 16 V Ω A • Periodic avalan.
* New revolutionary high voltage technology
* Ultra low gate charge
VDS @ Tjmax RDS(on) ID
560 0.28 16
V Ω A
* Periodic avalanche rated
PG-TO220FP PG-TO262
PG-TO220
* Extreme dv/dt rated
2
* Ultra low effective capacitances
* Improved transconductance
P-TO220-3-31
3 12
* PG-TO-220-3-31;-.
SPI16N50C3 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤280mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d.
*Static drain-source on-resistance:
RDS(on) ≤280mΩ
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*DESCRITION
*New revolutionary high voltage technology
*Ultra low effective capacitance
*ABSOLUTE MA.