SPI20N65C3 Datasheet
SPI20N65C3 Datasheet (Infineon)
Infineon
SPP20N65C3, SPA20N65C3 SPI20N65C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated .
* New revolutionary high voltage technology
* Worldwide best R DS(on) in TO 220
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* High peak current capability
* Improved transconductance
P-TO220-3-31
1 2 3
V DS RDS(on) ID
PG-TO262 PG-TO220FP
650 0.19 20.7
PG-TO220
V Ω A
.
SPI20N65C3 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Con.
*Static drain-source on-resistance:
RDS(on) ≤0.19Ω
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*DESCRIPTION
*Ultra low gate charge
*High peak current capability
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
.