SPP04N50C3 Datasheet and Specifications PDF

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isc N-Channel MOSFET Transistor SPP04N50C3，ISPP04N50C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.95Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot.

*Static drain-source on-resistance: RDS(on) ≤0.95Ω
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Ultra low gate charge
*Improved transcondutance
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMB.