SPP04N60S5 Datasheet
SPP04N60S5 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·Ultra low gate charge ·Ultra low effective capacitance ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Volta.
*Static drain-source on-resistance:
RDS(on) ≤0.95Ω
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*DESCRIPTION
*Ultra low gate charge
*Ultra low effective capacitance
*Improved transconductance
*ABS.
SPP04N60S5 Datasheet (Infineon)
Infineon
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved tr.
* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* Ultra low effective capacitances
* Improved transconductance
SPP04N60S5
VDS RDS(on)
ID
600 V 0.95 Ω 4.5 A
PG-TO220
2
P-TO220-3-1
23 1
Type SPP04N60S5
Package PG-TO220
Order.