SPP07N60CFD Datasheet
SPP07N60CFD Datasheet (Infineon)
Infineon
SPP07N60CFD CoolMOSTM Power Transistor Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge Product Summary V DS @Tjmax R DS(on),max ID • Ex.
* Intrinsic fast-recovery body diode
* Extremely low reverse recovery charge
* Ultra low gate charge
Product Summary V DS @Tjmax R DS(on),max ID
* Extreme dv /dt rated
* High peak current capability
* Qualified for industrial grade applications according to JEDEC1)
650 V 0.7 " 6.6 A
PG-TO220
Co.
SPP07N60CFD Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Con.
*Static drain-source on-resistance:
RDS(on) ≤0.7Ω
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*DESCRIPTION
*Ultra low gate charge
*High peak current capability
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
.