SPP08N50C3 Datasheet
SPP08N50C3 Datasheet (Infineon)
Infineon
SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax 560 V RDS(on) 0.6 Ω ID 7.6 A • Periodic aval.
* New revolutionary high voltage technology
* Ultra low gate charge
VDS @ Tjmax 560 V
RDS(on)
0.6 Ω
ID
7.6 A
* Periodic avalanche rated
PG-TO220FP PG-TO262
PG-TO220
* Extreme dv/dt rated
* Ultra low effective capacitances
* Improved transconductance
23 1 P-TO220-3-31
* PG-TO-220-3-31;-3-.
SPP08N50C3 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
isc N-Channel MOSFET Transistor SPP08N50C3，ISPP08N50C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.6Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot v.
*Static drain-source on-resistance:
RDS(on) ≤0.6Ω
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*DESCRITION
*New revolutionary high voltage technology
*Ultra low effective capacitance
*ABSOLUTE MAX.