SPP11N60C3 Datasheet
SPP11N60C3 Datasheet (Infineon)
Infineon
SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID • Periodic avalanch.
* New revolutionary high voltage technology
* Ultra low gate charge
VDS @ Tjmax RDS(on) ID
* Periodic avalanche rated
PG-TO220FP PG-TO262
* Extreme dv/dt rated
* High peak current capability
* Improved transconductance
23 1 P-TO220-3-31
* PG-TO-220-3-31;-3-111: Fully isolated package (2500 VA.
SPP11N60C3 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
isc N-Channel MOSFET Transistor SPP11N60C3，ISPP11N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.38Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot.
*Static drain-source on-resistance:
RDS(on) ≤0.38Ω
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*DESCRITION
*Ultra low gate charge
*High peak current capability
*Improved transconductance
*ABSOLUT.