SPP11N60S5 Datasheet
SPP11N60S5 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPP11N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum L.
*Static drain-source on-resistance:
RDS(on) ≤3mΩ
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*DESCRITION
*reliable device for use in a wide variety of applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25.
SPP11N60S5 Datasheet (Infineon)
Infineon
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved tr.
* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* Ultra low effective capacitances
* Improved transconductance
SPP11N60S5 SPI11N60S5
VDS RDS(on)
ID
600 V 0.38 Ω 11 A
PG-TO262
PG-TO220
2
P-TO220-3-1
23 1
Type SPP11N60S5 SPI1.