SPP12N50C3 Datasheet and Specifications PDF

SPP12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax 560 V RDS(on) 0.38 Ω ID 11.6 A • Periodic av.

* New revolutionary high voltage technology
* Ultra low gate charge VDS @ Tjmax 560 V RDS(on) 0.38 Ω ID 11.6 A
* Periodic avalanche rated PG-TO220-F3P-31 PG-TO262- PG-TO220
* Extreme dv/dt rated 2
* Ultra low effective capacitances
* Improved transconductance 1 23 P-TO220-3-31 P-TO220-3-.

isc N-Channel MOSFET Transistor SPP12N50C3，ISPP12N50C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.38Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot .

*Static drain-source on-resistance: RDS(on) ≤0.38Ω
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*New revolutionary high voltage technology
*Ultra low effective capacitance
*ABSOLUTE MA.