SPP16N50C3 Datasheet and Specifications PDF

SPP16N50C3 SPI16N50C3, SPA16N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID 560 0.28 16 V Ω A • Periodic avalan.

* New revolutionary high voltage technology
* Ultra low gate charge VDS @ Tjmax RDS(on) ID 560 0.28 16 V Ω A
* Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220
* Extreme dv/dt rated 2
* Ultra low effective capacitances
* Improved transconductance P-TO220-3-31 3 12
* PG-TO-220-3-31;-.

isc N-Channel MOSFET Transistor SPP16N50C3，ISPP16N50C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤280mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot .

*Static drain-source on-resistance: RDS(on) ≤280mΩ
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*New revolutionary high voltage technology
*Ultra low effective capacitance
*ABSOLUTE MA.