SPP20N65C3 Datasheet and Specifications PDF

·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Con.

*Static drain-source on-resistance: RDS(on) ≤0.19Ω
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRIPTION
*Ultra low gate charge
*High peak current capability
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) .

SPP20N65C3, SPA20N65C3 SPI20N65C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated .

* New revolutionary high voltage technology
* Worldwide best R DS(on) in TO 220
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* High peak current capability
* Improved transconductance P-TO220-3-31 1 2 3 V DS RDS(on) ID PG-TO262 PG-TO220FP 650 0.19 20.7 PG-TO220 V Ω A .