SPP21N50C3 Datasheet and Specifications PDF

SPP21N50C3 SPI21N50C3, SPA21N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated •.

* New revolutionary high voltage technology
* Worldwide best RDS(on) in TO 220
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* Ultra low effective capacitances
* Improved transconductance 1 2 3 VDS @ Tjmax RDS(on) ID PG-TO220FP P G-TO262 560 0.19 21 PG-TO220 V Ω A Type.

isc N-Channel MOSFET Transistor SPP21N50C3，ISPP21N50C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤190mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot .

*Static drain-source on-resistance: RDS(on) ≤190mΩ
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*New revolutionary high voltage technology
*Ultra low effective capacitance
*ABSOLUTE MA.